High voltage pulse crushing and physical separation of polycrystalline

The subject of this study was recycling of a polycrystalline silicon photovoltaic panel An end of life photovoltaic panel 1650 mm × 988 mm × 45 mm kg 250 W from a recycler was used for the experiments Fig 1 First the external frames and junction box were removed from the panel

Polycrystalline cubic silicon carbide photoconductive switch

The first cubic silicon carbide 3C SiC photoconductive switches were fabricated from polycrystalline 3C SiC The switches had a dark resistivity of 10/sup 6/ /spl Omega//cm A breakdown field of 250 kV/cm and a peak photocurrent density of 10 kA/cm/sup 2/ through the switch were obtained The ratio of off resistance to on resistance of the switch reached up to

SILICON CARBIDE International Agency for Research

iii Polycrystalline silicon carbide fibres Polycrystalline silicon carbide fibres diam eter generally < 2 µm; length generally ≤ 30 µm can also be manufactured for commercial purposes by various methods polymer pyrol ysis chemical vapour deposition or sintering Wright 2006 Sampling and analytical methods 6

Preparation of substantially polycrystalline silicon carbide

The substantially polycrystalline silicon carbide fibers which are formed by the process of the present invention have at least 75% crystallinity and have a density of at least about gm/cm³ The polymeric precursor or the fibers contain or have incorporated therein at least about % by weight boron

The effect of grain size on fracture of polycrystalline

developed to study fracture of a polycrystalline material namely cubic silicon carbide 3C SiC Specifically information from atomistic simulations is used as inputs for the meso scale simulations; however a primary distinctionof this

Fracture toughness of polycrystalline silicon carbide thin films

Thin film polycrystalline silicon carbide poly SiC doubly clamped microtensile specimens were fabricated using standard micromachining processes and precracked using microindentation The poly SiC had been deposited on Si wafers by atmospheric pressure chemical vapor deposition a process which leads to residual tensile stresses in the poly SiC

Characterization of polycrystalline silicon carbide films

X ray diffraction transmission electron microscopy and Rutherford backscattering spectroscopy were used to characterize the microstructure of polycrystalline SiC films grown on as deposited and annealed polysilicon substrates For both substrate types the texture of the SiC films resembles the polysilicon at the onset of SiC growth During the high temperature

Understanding the Polycrystalline Silicon

This study aims to improve the high temperature creep characteristics of polycrystalline silicon carbide fibers by dispersing hafnium carbide nanocrystals in crystalline silicon carbide fibers and the changes in the microstructure crystal phase and crystallite size were observed under various sintering conditions by different experiments

Characterization of polycrystalline silicon carbide films

Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon Volume 13 Issue 2 Skip to main content Accessibility help We use cookies to distinguish you from other users and to provide you with a better experience on our websites

Molecular dynamics study on grinding mechanism of polycrystalline

In this paper stress temperature dislocation surface morphology and crystal structure of polycrystalline silicon carbide under different grinding speeds and grain sizes are studied by molecular dynamics simulation Influence of silicon carbide with different grain sizes on formation and emission of dislocations and relationship between formation and emission of

Chlorinated silicon carbide CVD revisited for polycrystalline

Silicon carbide is interesting for high power high temperature and high frequency applications but its development is limited by the low quality and high cost of single crystalline wafers

： ROHM

（polycrystalline silicon carbide polycrystal SiC）（single crystal SiC） 。200（polytypes） 。

A molecular dynamics investigation into nanoscale scratching mechanism

The scratching processes of monocrystalline and polycrystalline silicon carbide SiC with diamond grit were studied by molecular dynamics simulation to investigate the nanoscale material removal behavior The results showed that for both monocrystalline and polycrystalline SiC the material removal processes were achieved by the phase

Electrical Characteristics of Rectifying Polycrystalline

polycrystalline silicon polysilicon on 4H silicon carbide 4H SiC Current properties and barrier heights were found using analysis of the heterojunction This revealed that Schottky analysis would be valid for the large barrier height devices Isotype and an isotype devices were fabricated on both p type and n

Elastic properties of polycrystalline silicon experimental

Silicon has a large impact on today s world economy also known as Silicon Age For instance it is an extremely important material for renewable energy systems like photovoltaics Thereby the use of polycrystalline silicon has a very wide range of application For a safe and economic operation with this material the most accurate prediction or measurement

Polycrystalline silicon carbide film deposition using

A polycrystalline silicon carbide film is formed on a silicon surface by atmospheric pressure chemical vapor deposition using a gas mixture of monomethylsilane and hydrogen chloride in ambient hydrogen The film deposition near 1000 K stops within 1 min However the film thickness obtained before the saturation of the deposition increases by

Chlorinated silicon carbide CVD revisited for polycrystalline

DOI / Corpus ID 94588980; Chlorinated silicon carbide CVD revisited for polycrystalline bulk growth article{Chichignoud2007ChlorinatedSC title={Chlorinated silicon carbide CVD revisited for polycrystalline bulk growth} author={Guy Chichignoud and M Ucar Morais and M Pons and

Application of polycrystalline silicon carbide thin films as the

In this paper silicon rich polycrystalline silicon carbide poly SiCx thin films were prepared for passivating contact of silicon solar effect of different carbon doping ratios R [methane flow sccm /silane flow sccm ] and the annealing temperatures on the passivation quality was investigated The lifetime test showed that given a lower annealing temperature

Polycrystalline Silicon Carbide Tystar

Polycrystalline Silicon Carbide Silicon carbide s strength thermal conductivity and stability in extreme environments make it a useful material for electronics and MEMS Typical Film Thickness µm; Batch Size 25; Deposition Rate 6 9 nm/min 60 90 Å/min

Polycrystalline Silicon Thin Film SpringerLink

By eliminating the costly steps of Si wafer polycrystalline silicon poly Si thin film solar cells become the very promising candidates for cost effective photovoltaics in the future SiO x N y silicon carbide SiC x or their stacks were ever used as interlayer in LPC poly Si solar cells Recently the significant improvements in

Enhanced Ohmic contact via graphitization of polycrystalline silicon

Electrical contact to silicon carbide with low contact resistivity and high stability is a critical requirement for SiC based microsystem and nanosystem technology for harsh environment applications In this letter nanocrystalline graphitic carbon is grown at the interface between SiC and Pt to lower the Ohmic contact resistivity and enhance the stability of Pt

Polycrystalline Silicon Carbide Crusher

Polycrystalline Silicon Carbide Crusher; Fabrication and testing of bulk micromachined silicon carbide This paper explores the development of high temperature pressure sensors based on polycrystalline and single crystalline 3C SiC piezoresistors and fabricated by bulk micromachining the underlying 100 mm diameter 100 silicon substrate

Blistering free polycrystalline silicon carbide films for double

In this work we present a study of PECVD preparation of B doped polycrystalline silicon carbide poly SiC x films with a blistering free appearance by incorporating carbon C and optimizing the annealing process It demonstrates that a thick poly Si deposited on polished c Si substrates with a low surface roughness tends to blister which